RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF Mosfet LDMOS 32V 1.3A 2.63GHz ~ 2.69GHz 17.4dB 45W LDMOST
Win Source Part Number: 969127-BLF8G27LS-140
Category: Discrete Semiconductor Products>Transistors
Package: Tray
Standard Package: 20
Voltage - Rated: 65 V
Frequency: 2.63GHz ~ 2.69GHz
Current - Test: 1.3 A
Gain: 17.4dB
Transistor Type: LDMOS
Voltage - Test: 32 V
Power - Output: 45W
Package / Case: SOT-1120B
Supplier Device Package: LDMOST
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Ampleon USA Inc.
Other Names: 568-12836,9340671711
Base Product Number: BLF8G27
Product Status: Obsolete
RF MOSFET LDMOS 32V LDMOST
| Rochester Electronics | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF MOSFET Transistors | RF Transistors |
| Product Number | BLF8G27LS-140V,112 | 568-12836-ND | 969127-BLF8G27LS-140V,112 | BLF8G27LS-140V,112 |
| Product Name | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | |||
| Package Type | SOT1120 | SOT-1120B | SOT3 | SOT-1120B |
| Packing Method | Tray | Tray |
