Manufacturer: ON Semiconductor
Win Source Part Number: 039609-BD435G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA (ICBO)
Typical Gain (hFE) (Min): 85 @ 500mA, 1V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
NPN BJT Transistor, 32V, 4A, 3MHz, TO-225 Product overview: BD435G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 32V, 4A, 3MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 32V, 4A, 3MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD435G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-126
Medium Power NPN Bipolar Power Transistor
TRANS NPN 32V 4A TO126
BIPOLAR TRANSISTOR, NPN, 32V; Transistor Polarity:NPN; Collector Emitter Voltage Max:32V; Continuous Collector Current:4A; Power Dissipation:36W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz; MSL:- RoHS Compliant: Yes
Bipolar Transistors - BJT BIP NPN 4A 22V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Power MOSFET | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 039609-BD435G | 276-BD435G | BD435GOS-ND | BD435G | BD435G | 26K3509 | BD435G |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - BD435G | 32V 4A 3MHz Bipolar Transistor | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor, Npn, 32V; Transistor Polarity Onsemi | Bipolar Transistors - BJT | |
| Polarity | NPN; NPN | NPN | NPN | NPN | |||
| Package Type | SOT3; TO-225AA | TO-225AA, TO-126-3 | TO-225 | TO-3 | |||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||
| VCEO | 32 volts | 32 volts | 32 volts | ||||
| VCBO | 32 volts |
