Infineon Technologies AG 100V 79A MOSFET Transistor BSC0805LSATMA1

Power Field-Effect Transistor

MOSFET N-CH 100V 79A TDSON-8-6 Product overview: BSC0805LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 79A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 79A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC0805LSATMA1 can be used for catalog matching and distributor lookup.

Win Source Part Number: 960179-BSC0805LSATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™ 5
Package: Cut Tape (CT),
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Power Dissipation (Max): 83W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001861048,448-BSC0805LSATMA1CT,448-BSC0805LSATMA1DKR,448-BSC0805LSATMA1TR
Base Product Number: BSC0805
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

MOSFET N-CH 100V 79A TDSON-8-6