RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Win Source Part Number: 1012726-BLC2425M10LS
Category: Discrete Semiconductor Products>Transistors
Package: Tray
Standard Package: 20
Voltage - Rated: 65 V
Frequency: 2.4GHz ~ 2.5GHz
Current - Test: 100 mA
Gain: 14.4dB
Transistor Type: LDMOS
Voltage - Test: 32 V
Power - Output: 250W
Package / Case: SOT-1270-1
Supplier Device Package: SOT-1270-1
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 3 (168 Hours)
Current Rating (Amps): 2.8µA
HTSUS: 8541.29.0075
Mfr: Ampleon USA Inc.
Other Names: 1603-1180,BLC2425M10
Base Product Number: BLC2425
RF Mosfet LDMOS 32V 100mA 2.4GHz ~ 2.5GHz 14.4dB 250W SOT-1270-1
RF MOSFET LDMOS 32V SOT1270-1
| Rochester Electronics | Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | RF MOSFET Transistors | Transistors | RF Transistors |
| Product Number | BLC2425M10LS250Z | 1012726-BLC2425M10LS250Z | 1603-1180-ND | BLC2425M10LS250Z |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | |||
| Package Type | SOT1270 | SOT3 | SOT-1270-1 | SOT-1270-1 |
| Packing Method | Tray | Tray |
