onsemi Single Bipolar Transistors BD13910STU

Description
1.5 A, 80 V NPN Power Bipolar Junction Transistor
Request a Quote Datasheet
Description
1.5 A, 80 V NPN Power Bipolar Junction Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BD13910STU - Rochester Electronics
Newburyport, MA, United States
1.5 A, 80 V NPN Power Bipolar Junction Transistor

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Supplier's Site Datasheet
 - BD13910STU - Rochester Electronics
Newburyport, MA, United States
1.5 A, 80 V NPN Power Bipolar Junction Transistor

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BD13910STUOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD13910STUOS-ND
Single Bipolar Transistors BD13910STUOS-ND
Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3

Buy Now Datasheet
Bipolar Transistor 2087-BD13910STU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial Product overview: BD13910STU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BD13910STU can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT NPN Si Transistor Epitaxial Product overview: BD13910STU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BD13910STU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD13910STU - 200954-BD13910STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD13910STU
200954-BD13910STU
TRANSISTORS - Transistors (BJT) - Single - BD13910STU 200954-BD13910STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 200954-BD13910STU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Family Name: BD13910 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 63 @ 150mA, 2V Maximum Power Dissipation: 1.25W Alternative Parts (Cross-Reference): BD139; BD139-BP; MJE722; MJE722 Lead Free; Introduction Date: November 14, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 200954-BD13910STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Family Name: BD13910
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 63 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Alternative Parts (Cross-Reference): BD139; BD139-BP; MJE722; MJE722 Lead Free;
Introduction Date: November 14, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 1,920

Buy Now Datasheet
Single Bipolar Transistors - BD13910STU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD13910STU
Single Bipolar Transistors BD13910STU
TRANS NPN 80V 1.5A TO126-3

TRANS NPN 80V 1.5A TO126-3

Supplier's Site
Bipolar Transistors - 1698595 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1698595
Bipolar Transistors 1698595
Transistor, Fairchild, BD13910STU

Transistor, Fairchild, BD13910STU

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD13910STU
Bipolar Transistors - BJT BD13910STU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD13910STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD13910STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD13910STU
TRANS NPN 80V 1.5A TO126-3

TRANS NPN 80V 1.5A TO126-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BD13910STU BD13910STUOS-ND 2087-BD13910STU 200954-BD13910STU BD13910STU 1698595 BD13910STU BD13910STU
Product Name Single Bipolar Transistors Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - BD13910STU Single Bipolar Transistors Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type TO-126-3 TO-225AA, TO-126-3 Tube SOT3; TO-126 TO-225AA, TO-126-3 To-126
Packing Method Tube; Tube Tube Rail; Tube; Tube/Rail Tube; Tube
Polarity NPN NPN NPN; NPN NPN; NPN NPN
IC(max) 1500 milliamps 1500 milliamps 1500 milliamps 1500 milliamps
PD 12.5 milliwatts 1250 milliwatts
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