The BLF175 is a silicon N-channel enhancement mode vertical D-MOS transistor designed for HF/VHF power amplifier applications. It is housed in a 4-lead SOT123A flange package with a ceramic cap, featuring isolated leads and a drain flange. The device supports drain-source voltages up to 125 V and gate-source voltages up to 20 V. At 28 MHz in class-AB operation, it delivers 30 W PEP output with a typical power gain of 24 dB and 2-tone efficiency of 40%. It can withstand a load mismatch of VSWR=50 at 30 W. Thermal resistance from junction to mounting base is 2.6 K/W, and from mounting base to heatsink is 0.3 K/W. The transistor includes gold metallization for reliability and contains a beryllium oxide disc requiring special disposal. Maximum junction temperature is 200 °C.
BLF175 - HF/VHF Power VDMOS Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BLF175 |
| Package Type | SOT123A |
