onsemi TRANSISTORS - Transistors (BJT) - Single - BD435S BD435S

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 102342-BD435S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 40 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-126-3

Medium Power NPN Bipolar Power Transistor

Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: BD435S from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BD435S can be used for catalog matching and distributor lookup.