MOSFET N-CH 30V 10A/40A 8TSDSON Product overview: BSZ100N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ100N03MSGATMA
MOSFET N-CH 30V 10A/40A 8TSDSON
N-Channel 30V 10A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8
N-Channel 30V 10A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8
N-Channel 30V 10A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8
Manufacturer: Infineon Technologies
Win Source Part Number: 098282-BSZ100N03MSGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TSDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
12V-300V N-Channel Power MOSFET
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
MOSFET N-CH 30V 10A/40A 8TSDSON
MOSFET, N-CH, 30V, 40A, PG-TSDSON-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSZ100N03MSGATMA1 | BSZ100N03MSGATMA1 | BSZ100N03MSGATMA1DKR-ND | 098282-BSZ100N03MSGATMA1 | BSZ100N03MSGATMA1 | BSZ100N03MSGATMA1 | BSZ100N03MSGATMA1 | 97Y1269 |
| Product Name | 30V 10A 40A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSZ100N03MSGATMA1 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Channel Type Infineon | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| Transconductance | 0.0260 kS | |||||||
| PD | 30 milliwatts | 2100 milliwatts | 2100 to 30000 milliwatts |
