onsemi TRANSISTORS - Transistors (BJT) - Single - BD13716S BD13716S

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011253-BD13716S
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 2k pcs

Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3

NPN BJT 1.5A 60V TO-126 Power Transistor Product overview: BD13716S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.5A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 1.5A, 60V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD13716S can be used for catalog matching and distributor lookup.

1.5 A, 60 V NPN Power Bipolar Junction Transistor