P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8
P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8
P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8
MOSFET P-CH 30V 12.6A 8DSO Product overview: BSO080P03SHXUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSO080P03SHXUMA1
Win Source Part Number: 1124267-BSO080P03SHX
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.79W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSO080P03S H; BSO080P03SH; BSO080P03SHXT; BSO080P03SHXUMA1.;
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000613798,BSO080P0
Base Product Number: BSO080
Drive Voltage (Max Rds On, Min Rds On): 10V
20V-250V P-Channel Power MOSFET
MOSFET P-CH 30V 12.6A 8DSO
MOSFET P-CH 30V 12.6A 8DSO
MOSFET Transistor, P Channel, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V RoHS Compliant: Yes
Trans MOSFET P-CH 30V 12.6A 8-Pin DSO Dry
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSO080P03SHXUMA1CT-ND | 278-BSO080P03SHXUMA1 | 2735242 | 1124267-BSO080P03SHXUMA1 | BSO080P03SHXUMA1 | BSO080P03SHXUMA1 | BSO080P03SHXUMA1 | 50Y1818 | 376-BSO080P03SHXUMA1 |
| Product Name | Single FETs, MOSFETs | 30V 12.6A MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, -12.6 A, -30 V, 0.0067 Ohm, -10 V, -1.5 V Rohs Compliant Infineon | Trans MOSFET P-CH 30V 12.6A 8-Pin DSO Dry | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | SO-8; PG-DSO-8 | SO-8; SOT3 | SO-8; PG-DSO-8 | SO-8; 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) | TO-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 2500 milliwatts | 1790 milliwatts | 1790 milliwatts | 1790 milliwatts |
