NPN general-purpose transistor in a medium power SOT89 (SC-62) surface-mounted plastic package measuring 4.5 mm x 2.5 mm x 1.5 mm. Collector-emitter voltage rated at 80 V, collector current at 1 A, with peak collector current of 2 A for pulses up to 1 ms. Junction temperature rated up to 150 °C. Qualified to AEC-Q101 for automotive applications. Total power dissipation is 1.35 W on an FR4 PCB with a 6 cm² collector pad. Thermal resistance from junction to ambient is 93 K/W in free air. DC current gain ranges from 300 at 100 mA collector current under specified conditions.
NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: BSR33-Q.
Features and benefits
Applications
TRANS NPN 80V 1A SOT-89
TRANS NPN 80V 1A SOT-89
TRANS NPN 80V 1A SOT-89
60 V, 1 A NPN medium power transistor
| Nexperia B.V. | DigiKey | Rochester Electronics | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Power MOSFET |
| Product Number | BSR43-QX | 1727-BSR43-QXTR-ND | BSR43-QX |
| Product Name | 80 V, 1 A NPN medium power transistor | Single Bipolar Transistors | |
| Package Type | SOT89; SOT89 SOT89 | SOT89; TO-243AA | SOT89 |
