12V-300V N-Channel Power MOSFET
MOSFET N-CH 30V 18A/40A 8TSDSON Product overview: BSZ035N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ035N03MSGATMA
N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8
Win Source Part Number: 965790-BSZ035N03MSGA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSZ0902NSATMA1; IRFHS8342TRPBF; IRFHS8342TR2PBF; FDMS7698; FDMC7696; FDMS7694BSZ035N03MS G; BSZ035N03MSG; BSZ035N03MSG-;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSZ035N03MSGATMA1DKR
Base Product Number: BSZ035
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 30V 18A/40A 8TSDSON
MOSFET, N-CH, 30V, 40A, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 18A/40A 8TSDSON
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSZ035N03MSGATMA1 | 278-BSZ035N03MSGATMA1 | BSZ035N03MSGATMA1DKR-ND | 965790-BSZ035N03MSGATMA1 | BSZ035N03MSGATMA1 | 97Y1268 | BSZ035N03MSGATMA1 |
| Product Name | 30V 18A 40A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | PG-TSDSON-8 | Tape & Reel (TR) | 8-PowerTDFN | SOT3 | 8-PowerTDFN | TO-3 | 8-PowerTDFN |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts |