Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single BSZ035N03MSGATMA1

Description
Win Source Part Number: 965790-BSZ035N03MSGA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8 Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSZ0902NSATMA1; IRFHS8342TRPBF; IRFHS8342TR2PBF; FDMS7698; FDMC7696; FDMS7694BSZ035N03MS G; BSZ035N03MSG; BSZ035N03MSG-; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSZ035N03MSGATMA1DKR ,2156-BSZ035N03MSGAT MA1,BSZ035N03MSGXT,B SZ035N03MSGINDKR-ND, BSZ035N03MSGINCT,BSZ 035N03MSG,BSZ035N03M SGINTR-ND,IFEINFBSZ0 35N03MSGATMA1,BSZ035 N03MSGATMA1TR,SP0003 11511,BSZ035N03MSGAT MA1CT,BSZ035N03MSGIN DKR,BSZ035N03MS G,BSZ035N03MSGINCT-N D,BSZ035N03MSGINTR Base Product Number: BSZ035 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 965790-BSZ035N03MSGA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8 Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSZ0902NSATMA1; IRFHS8342TRPBF; IRFHS8342TR2PBF; FDMS7698; FDMC7696; FDMS7694BSZ035N03MS G; BSZ035N03MSG; BSZ035N03MSG-; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSZ035N03MSGATMA1DKR ,2156-BSZ035N03MSGAT MA1,BSZ035N03MSGXT,B SZ035N03MSGINDKR-ND, BSZ035N03MSGINCT,BSZ 035N03MSG,BSZ035N03M SGINTR-ND,IFEINFBSZ0 35N03MSGATMA1,BSZ035 N03MSGATMA1TR,SP0003 11511,BSZ035N03MSGAT MA1CT,BSZ035N03MSGIN DKR,BSZ035N03MS G,BSZ035N03MSGINCT-N D,BSZ035N03MSGINTR Base Product Number: BSZ035 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 965790-BSZ035N03MSGATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
965790-BSZ035N03MSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 965790-BSZ035N03MSGATMA1
Win Source Part Number: 965790-BSZ035N03MSGA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8 Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSZ0902NSATMA1; IRFHS8342TRPBF; IRFHS8342TR2PBF; FDMS7698; FDMC7696; FDMS7694BSZ035N03MS G; BSZ035N03MSG; BSZ035N03MSG-; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: BSZ035N03MSGATMA1DKR ,2156-BSZ035N03MSGAT MA1,BSZ035N03MSGXT,B SZ035N03MSGINDKR-ND, BSZ035N03MSGINCT,BSZ 035N03MSG,BSZ035N03M SGINTR-ND,IFEINFBSZ0 35N03MSGATMA1,BSZ035 N03MSGATMA1TR,SP0003 11511,BSZ035N03MSGAT MA1CT,BSZ035N03MSGIN DKR,BSZ035N03MS G,BSZ035N03MSGINCT-N D,BSZ035N03MSGINTR Base Product Number: BSZ035 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 965790-BSZ035N03MSGATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSZ0902NSATMA1; IRFHS8342TRPBF; IRFHS8342TR2PBF; FDMS7698; FDMC7696; FDMS7694BSZ035N03MS G; BSZ035N03MSG; BSZ035N03MSG-;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSZ035N03MSGATMA1DKR,2156-BSZ035N03MSGATMA1,BSZ035N03MSGXT,BSZ035N03MSGINDKR-ND,BSZ035N03MSGINCT,BSZ035N03MSG,BSZ035N03MSGINTR-ND,IFEINFBSZ035N03MSGATMA1,BSZ035N03MSGATMA1TR,SP000311511,BSZ035N03MSGATMA1CT,BSZ035N03MSGINDKR,BSZ035N03MS G,BSZ035N03MSGINCT-ND,BSZ035N03MSGINTR
Base Product Number: BSZ035
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
 - BSZ035N03MSGATMA1 - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Singapore, Singapore
30V 18A 40A MOSFET Transistor
278-BSZ035N03MSGATMA1
30V 18A 40A MOSFET Transistor 278-BSZ035N03MSGATMA1
MOSFET N-CH 30V 18A/40A 8TSDSON Product overview: BSZ035N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ035N03MSGATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 18A/40A 8TSDSON Product overview: BSZ035N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSZ035N03MSGATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - BSZ035N03MSGATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ035N03MSGATMA1DKR-ND
Single FETs, MOSFETs BSZ035N03MSGATMA1DKR-ND
N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Single FETs, MOSFETs - BSZ035N03MSGATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ035N03MSGATMA1CT-ND
Single FETs, MOSFETs BSZ035N03MSGATMA1CT-ND
N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Single FETs, MOSFETs - BSZ035N03MSGATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ035N03MSGATMA1TR-ND
Single FETs, MOSFETs BSZ035N03MSGATMA1TR-ND
N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

N-Channel 30V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Transistor Polarity Infineon - 97Y1268 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Transistor Polarity Infineon
97Y1268
Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Transistor Polarity Infineon 97Y1268
MOSFET, N-CH, 30V, 40A, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 40A, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSZ035N03MSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSZ035N03MSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSZ035N03MSGATMA1
MOSFET N-CH 30V 18A/40A 8TSDSON

MOSFET N-CH 30V 18A/40A 8TSDSON

Supplier's Site
Single FETs, MOSFETs - BSZ035N03MSGATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSZ035N03MSGATMA1
Single FETs, MOSFETs BSZ035N03MSGATMA1
MOSFET N-CH 30V 18A/40A 8TSDSON

MOSFET N-CH 30V 18A/40A 8TSDSON

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 965790-BSZ035N03MSGATMA1 BSZ035N03MSGATMA1 278-BSZ035N03MSGATMA1 BSZ035N03MSGATMA1DKR-ND 97Y1268 BSZ035N03MSGATMA1 BSZ035N03MSGATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 30V 18A 40A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 2100 to 69000 milliwatts 2100 milliwatts 2100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 PG-TSDSON-8 Tape & Reel (TR) 8-PowerTDFN TO-3 8-PowerTDFN 8-PowerTDFN
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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