Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BTS131E3045ANTMA1 BTS131E3045ANTMA1

The BTS131 is an N-channel enhancement mode MOSFET with an integrated temperature sensor and thyristor characteristic, designed for short-circuit protection in power applications. It is packaged in a TO-220AB case with a drain pin electrically shorted to the tab. The device has a continuous drain current rating of 25 A at 25°C, a drain-source voltage rating of 50 V, and an on-state resistance of 0.06 Ω at 12 A and 4.5 V gate voltage. It operates over a junction temperature range of -55°C to +150°C and meets IEC 68-1 climatic category 55/150/56. Thermal resistance from junction to case is ≤1.67 K/W and junction to ambient is ≤75 K/W. The part complies with AEC-Q200 and RoHS standards.