N-Channel 25V 22A (Ta), 84A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 25V 22A (Ta), 84A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 25V 22A (Ta), 84A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-6
MOSFET N-CH 25V 22A/84A TDSON Product overview: BSC032NE2LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 22A, 84A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 22A, 84A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC032NE2LSATMA1
MOSFET N-CH 25V 22A/84A TDSON
Manufacturer: Infineon Technologies
Win Source Part Number: 130965-BSC032NE2LSAT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 22A (Ta), 84A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 1200pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Power Field-Effect Transistor, 22A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch 25V 84A TDSON-8 OptiMOS
MOSFET, N-CH, 25V, 84A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 25V 22A/84A TDSON
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSC032NE2LSATMA1TR-ND | 278-BSC032NE2LSATMA1 | BSC032NE2LSATMA1 | 2439305P | 130965-BSC032NE2LSATMA1 | BSC032NE2LSATMA1 | BSC032NE2LSATMA1 | 13AC8329 | BSC032NE2LSATMA1 |
| Product Name | Single FETs, MOSFETs | 25V 22A 84A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC032NE2LSATMA1 | MOSFET | Mosfet, N-Ch, 25V, 84A, Tdson; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | 8-PowerTDFN | Tape & Reel (TR) | 8-PowerTDFN | SuperSO8 5 x 6 | SOT3; PG-TDSON-8 | PG-TDSON-8 | TO-3 | Surface Mount | |
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | ||||||
| Transconductance | 0.0460 kS |
