MOSFET 2N-CH 25V 11A/31A TISON8 Product overview: BSC0910NDIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 11A, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 11A, 31A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSC0910NDIATMA1 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 11A, 31A 1W Surface Mount PG-TISON-8
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 11A, 31A 1W Surface Mount PG-TISON-8
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 11A, 31A 1W Surface Mount PG-TISON-8
12V-300V N-Channel Power MOSFET
Manufacturer: Infineon Technologies
Win Source Part Number: 1024344-BSC0910NDIAT
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TISON-8
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 11A, 31A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6.6nC @ 4.5V
Max Input Capacitance: 4500pF @ 12V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 25V 16A/31A TISON8
MOSFET 2N-CH 25V 11A/31A TISON8
MOSFET, DUAL N-CH, 25V, 40A, TISON-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Rochester Electronics | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-BSC0910NDIATMA1 | 448-BSC0910NDIATMA1TR-ND | 2148977 | BSC0910NDIATMA1 | 1024344-BSC0910NDIATMA1 | BSC0910NDIATMA1 | BSC0910NDIATMA1 | 49AC0106 |
| Product Name | 25V 11A 31A MOSFET Transistor | FET, MOSFET Arrays | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0910NDIATMA1 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 25V, 40A, Tison-8; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Asymmetrical | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| Transconductance | 0.0420 to 0.0850 kS | |||||||
| PD | 2.5 milliwatts | 1000 milliwatts |
