onsemi Single Bipolar Transistors BD681STU

Description
Medium Power NPN Darlington Bipolar Power Transistor
Request a Quote Datasheet
Description
Medium Power NPN Darlington Bipolar Power Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BD681STU - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Darlington Bipolar Power Transistor

Medium Power NPN Darlington Bipolar Power Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BD681STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD681STU-ND
Single Bipolar Transistors BD681STU-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD681STU - 079609-BD681STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD681STU
079609-BD681STU
TRANSISTORS - Transistors (BJT) - Single - BD681STU 079609-BD681STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 079609-BD681STU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 079609-BD681STU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD681STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD681STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD681STU
TRANS NPN DARL 100V 4A TO126-3

TRANS NPN DARL 100V 4A TO126-3

Supplier's Site
TRANS NPN DARL 100V 4A TO-126 - 598-BD681STU - Utmel Electronic Limited
Hong Kong, China
TRANS NPN DARL 100V 4A TO-126
598-BD681STU
TRANS NPN DARL 100V 4A TO-126 598-BD681STU
TRANS NPN DARL 100V 4A TO-126

TRANS NPN DARL 100V 4A TO-126

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
BD681STU
Darlington Transistors BD681STU
Darlington Transistors NPN Epitaxial Sil

Darlington Transistors NPN Epitaxial Sil

Buy Now Datasheet

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Transistors Bipolar RF Transistors Transistors Darlington Transistors
Product Number BD681STU BD681STU-ND 079609-BD681STU BD681STU 598-BD681STU BD681STU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD681STU Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS NPN DARL 100V 4A TO-126 Darlington Transistors
Package Type TO-126-3 TO-225AA, TO-126-3 SOT3; TO-126-3
Packing Method Tube; Tube Tube; Tube
Polarity NPN NPN; NPN - Darlington NPN; NPN
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