RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Ampleon USA Inc.
Win Source Part Number: 770048-BLA6H0912L-10
Packaging: Tube
Package: SOT539A
Frequency: 1.03GHz
Current - Test: 200mA
Gain: 15.5dB
Transistor Type: LDMOS (Dual), Common Source
Voltage - Test: 50V
Power - Output: 1000W
Family Name: BLA6H0912L-1000
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT539A
Voltage Rating DC: 100V
Alternative Parts (Cross-Reference): BLA6H0912L-1000;
Introduction Date: December 07, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
RF FET LDMOS 100V 15.5DB SOT539A
| Rochester Electronics | Win Source Electronics | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | RF MOSFET Transistors | RF Transistors |
| Product Number | BLA6H0912L-1000U | 770048-BLA6H0912L-1000U | 38-BLA6H0912L-1000U |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLA6H0912L-1000U | RF FET LDMOS 100V 15.5DB SOT539A | |
| Polarity | N-Channel | N-Channel; N-CHANNEL | |
| Package Type | SOT539 | SOT3 | |
| Packing Method | Tray | Tube; Tube | Tape Reel; Tray |
| Output Power | 1000 watts | 1000 watts |
