onsemi TRANSISTORS - Transistors (BJT) - Single - BD13916S BD13916S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011256-BD13916S Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 1.25W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011256-BD13916S Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 1.25W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD13916S - 011256-BD13916S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD13916S
011256-BD13916S
TRANSISTORS - Transistors (BJT) - Single - BD13916S 011256-BD13916S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011256-BD13916S Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 1.25W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011256-BD13916S
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Single Bipolar Transistors - BD13916S - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD13916S
Single Bipolar Transistors BD13916S
TRANS NPN 80V 1.5A TO126-3

TRANS NPN 80V 1.5A TO126-3

Supplier's Site Datasheet
 - BD13916S - Rochester Electronics
Newburyport, MA, United States
1.5 A, 80 V NPN Power Bipolar Junction Transistor

1.5 A, 80 V NPN Power Bipolar Junction Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BD13916S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD13916S-ND
Single Bipolar Transistors BD13916S-ND
Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD13916S
Bipolar Transistors - BJT BD13916S
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Buy Now Datasheet
Transistor, Bipol, Npn, 80V, To-126-3; Transistor Polarity Onsemi - 31Y0540 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipol, Npn, 80V, To-126-3; Transistor Polarity Onsemi
31Y0540
Transistor, Bipol, Npn, 80V, To-126-3; Transistor Polarity Onsemi 31Y0540
TRANSISTOR, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.25W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

TRANSISTOR, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.25W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD13916S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD13916S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD13916S
TRANS NPN 80V 1.5A TO126-3

TRANS NPN 80V 1.5A TO126-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Rochester Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Power MOSFET Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 011256-BD13916S BD13916S BD13916S BD13916S-ND BD13916S 31Y0540 BD13916S
Product Name TRANSISTORS - Transistors (BJT) - Single - BD13916S Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT Transistor, Bipol, Npn, 80V, To-126-3; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN; NPN NPN NPN
Package Type SOT3; TO-126 TO-225AA, TO-126-3 TO-126-3 TO-225AA, TO-126-3 TO-3
IC(max) 1500 milliamps 1500 milliamps
VCEO 80 volts 80 volts
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