Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011256-BD13916S
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 1.25W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs
Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: BD13916S from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-BD13916S can be used for catalog matching and distributor lookup.
1.5 A, 80 V NPN Power Bipolar Junction Transistor
TRANSISTOR, BIPOL, NPN, 80V, TO-126-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1.5A; Power Dissipation:1.25W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
TRANS NPN 80V 1.5A TO126-3
TRANS NPN 80V 1.5A TO126-3
Bipolar Transistors - BJT NPN Epitaxial Sil
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Power MOSFET | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BD13916S-ND | 011256-BD13916S | 2087-BD13916S | BD13916S | 31Y0540 | BD13916S | BD13916S | BD13916S |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BD13916S | Bipolar Transistor | Transistor, Bipol, Npn, 80V, To-126-3; Transistor Polarity Onsemi | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN; NPN | |||
| Package Type | TO-225AA, TO-126-3 | SOT3; TO-126 | Bulk | TO-126-3 | TO-3 | TO-225AA, TO-126-3 | ||
| Packing Method | Bulk | Bulk; Bulk | Bulk; Bulk | |||||
| IC(max) | 1500 milliamps | 1500 milliamps | 1500 milliamps | |||||
| PD | 12.5 milliwatts |
