RF FET N-CH 104V 860MHz 140W LDMOST SMT Product overview: BLF881S,112 from Ampleon is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 104V, 860MHz, 140W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 104V, 860MHz, 140W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BLF881S,112 can be used for catalog matching and distributor lookup.
Manufacturer: Ampleon USA Inc.
Win Source Part Number: 770176-BLF881S,112
Packaging: Tube
Package: SOT467B
Frequency: 860MHz
Current - Test: 500mA
Gain: 21dB
Transistor Type: LDMOS
Voltage - Test: 50V
Power - Output: 140W
Family Name: BLF881S
Categories: Discrete Semiconductor Products
Manufacturer Package: LDMOST
Voltage Rating DC: 104V
Alternative Parts (Cross-Reference): BLF881S;
Introduction Date: December 07, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
RF MOSFET LDMOS 50V SOT467B
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Power MOSFET | RF Transistors |
| Product Number | 285-BLF881S,112 | 770176-BLF881S,112 | BLF881S,112 | BLF881S,112 |
| Product Name | 104V 860MHz 140W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLF881S,112 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 104 volts | |||
| TJ | -65 C (-85 F) | |||
| Output Power | 140 watts | |||
| Power Gain | 21 dB |