130W LDMOS driver transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range, housed in a flanged ceramic package (SOT1135A) with two mounting holes and two leads. Maximum drain-source voltage is 100 V, gate-source voltage is -6 V to +13 V, and junction temperature reaches 225 °C. The device features integrated dual-side ESD protection, operates efficiently with 50% drain efficiency at 130 W output power, and maintains class-AB ruggedness under a 5:1 VSWR load mismatch. It complies with RoHS Directive 2002/95/EC.
LDMOS RF Power Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BLL8H0514L-130,112 |
| Package Type | SOT1135 |
