Ampleon RF FETs, MOSFETs BLF8G09LS-400PWU

Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BLF8G09LS-400PWU - Rochester Electronics
Newburyport, MA, United States
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
RF FETs, MOSFETs - 1603-1135-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1603-1135-ND
RF FETs, MOSFETs 1603-1135-ND
RF Mosfet LDMOS (Dual), Common Source 28V 3.4A 718.5MHz ~ 725.5MHz 20.6dB 95W CDFM8

RF Mosfet LDMOS (Dual), Common Source 28V 3.4A 718.5MHz ~ 725.5MHz 20.6dB 95W CDFM8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLF8G09LS-400PWU - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLF8G09LS-400PWU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLF8G09LS-400PWU
RF MOSFET LDMOS 28V CDFM8

RF MOSFET LDMOS 28V CDFM8

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Power MOSFET Transistors RF Transistors
Product Number BLF8G09LS-400PWU 1603-1135-ND BLF8G09LS-400PWU
Product Name RF FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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