RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Manufacturer: Ampleon USA Inc.
Win Source Part Number: 770181-BLF888BS,112
Packaging: Tube
Package: SOT539B
Current Rating: 2.8μA
Frequency: 470MHz ~ 860MHz
Gain: 21dB
Transistor Type: LDMOS (Dual), Common Source
Voltage - Test: 50V
Power - Output: 250W
Family Name: BLF888BS
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT539B
Voltage Rating DC: 104V
Alternative Parts (Cross-Reference): BLF888BS;
Introduction Date: December 07, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2030
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
RF MOSFET LDMOS DUAL 50V SOT539B
| Rochester Electronics | Win Source Electronics | Utmel Electronic Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | RF MOSFET Transistors | RF MOSFET Transistors |
| Product Number | BLF888BS,112 | 770181-BLF888BS,112 | 38-BLF888BS,112 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLF888BS,112 | RF MOSFET LDMOS DUAL 50V SOT539B | |
| Polarity | N-Channel | N-Channel; N-CHANNEL | |
| Package Type | SOT539 | SOT3 | |
| Packing Method | Tray | Tube; Tube | Tape Reel; Tray |
| Output Power | 250 watts | 250 watts | |
| Power Gain | 21 dB | 21 dB |