Ampleon BLF177

BLF177 is a silicon N-channel D-MOS transistor for HF/VHF power amplification in industrial and military applications. It is housed in a 4-lead SOT121B flanged ceramic package measuring 28.45 mm in height. The device supports a maximum drain-source voltage of 125 V, gate-source voltage of −20 V, and continuous drain current of 16 A, with a power dissipation of 220 W at 25°C. Thermal resistance from junction to base is up to 0.8 K/W and from base to heatsink is up to 0.2 K/W. In SSB class-AB mode at 28 MHz, it delivers 150 W PEP output with power gain exceeding 20 dB and third-order intermodulation distortion below −30 dB. It operates efficiently in CW class-B mode at 108 MHz with 70% efficiency. The transistor withstands full load mismatch up to VSWR=50. It contains beryllium oxide and requires proper handling.