Ampleon RF FETs, MOSFETs BLF7G24LS-140,118

Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
  • BLF7G24LS-140,118 - Rochester Electronics
    Rochester Electronics
  • RF FETs, MOSFETs - BLF7G24LS-140,118-ND - DigiKey
    DigiKey
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Description
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- BLF7G24LS-140,118 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
BLF7G24LS-140,118
BLF7G24LS-140,118
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
RF FETs, MOSFETs - BLF7G24LS-140,118-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
BLF7G24LS-140,118-ND
RF FETs, MOSFETs BLF7G24LS-140,118-ND
RF Mosfet LDMOS 28V 1.3A 2.3GHz ~ 2.4GHz 18.5dB 30W SOT502B

RF Mosfet LDMOS 28V 1.3A 2.3GHz ~ 2.4GHz 18.5dB 30W SOT502B

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Technical Specifications

  Rochester Electronics DigiKey
Product Category Power MOSFET Transistors
Product Number BLF7G24LS-140,118 BLF7G24LS-140,118-ND
Product Name RF FETs, MOSFETs
Polarity N-Channel
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