onsemi TRANSISTORS - Transistors (BJT) - Single - BD434S BD434S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011310-BD434S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011310-BD434S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD434S - 011310-BD434S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD434S
011310-BD434S
TRANSISTORS - Transistors (BJT) - Single - BD434S 011310-BD434S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011310-BD434S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011310-BD434S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 22V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 40 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Single Bipolar Transistors - BD434S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD434S-ND
Single Bipolar Transistors BD434S-ND
Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3

Buy Now Datasheet
 - BD434S - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
 - BD434S - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
Singapore
Through-Hole 4A 22V Bipolar Transistor
276-BD434S
Through-Hole 4A 22V Bipolar Transistor 276-BD434S
PNP BJT Transistor, 4A, 50hFE, 22V, TO-126, Through Hole Product overview: BD434S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 4A, 22V. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 4A, 22V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD434S can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 4A, 50hFE, 22V, TO-126, Through Hole Product overview: BD434S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 4A, 22V. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 4A, 22V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BD434S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANS PNP 22V 4A TO-126 - 598-BD434S - Utmel Electronic Limited
Hong Kong, China
TRANS PNP 22V 4A TO-126
598-BD434S
TRANS PNP 22V 4A TO-126 598-BD434S
TRANS PNP 22V 4A TO-126

TRANS PNP 22V 4A TO-126

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD434S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD434S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD434S
TRANS PNP 22V 4A TO126-3

TRANS PNP 22V 4A TO126-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD434S
Bipolar Transistors - BJT BD434S
Bipolar Transistors - BJT PNP Epitaxial Sil

Bipolar Transistors - BJT PNP Epitaxial Sil

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Power MOSFET Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 011310-BD434S BD434S-ND BD434S 276-BD434S 598-BD434S BD434S BD434S
Product Name TRANSISTORS - Transistors (BJT) - Single - BD434S Single Bipolar Transistors Through-Hole 4A 22V Bipolar Transistor TRANS PNP 22V 4A TO-126 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP; PNP PNP PNP PNP; PNP
Package Type SOT3; TO-126 TO-225AA, TO-126-3 TO-126
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 4000 milliamps 4000 milliamps
VCEO 22 volts 22 volts
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