onsemi Single Bipolar Transistors BD434S

Description
Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD434S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD434S-ND
Single Bipolar Transistors BD434S-ND
Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3

Buy Now Datasheet
 - BD434S - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
 - BD434S - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 4A, 22V, PNP, TO-126, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD434S - 011310-BD434S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD434S
011310-BD434S
TRANSISTORS - Transistors (BJT) - Single - BD434S 011310-BD434S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 011310-BD434S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 3MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 22V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 40 @ 10mA, 5V Maximum Power Dissipation: 36W Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 011310-BD434S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 3MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 22V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 40 @ 10mA, 5V
Maximum Power Dissipation: 36W
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD434S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD434S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD434S
TRANS PNP 22V 4A TO126-3

TRANS PNP 22V 4A TO126-3

Supplier's Site
TRANS PNP 22V 4A TO-126 - 598-BD434S - Utmel Electronic Limited
Hong Kong, China
TRANS PNP 22V 4A TO-126
598-BD434S
TRANS PNP 22V 4A TO-126 598-BD434S
TRANS PNP 22V 4A TO-126

TRANS PNP 22V 4A TO-126

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD434S
Bipolar Transistors - BJT BD434S
Bipolar Transistors - BJT PNP Epitaxial Sil

Bipolar Transistors - BJT PNP Epitaxial Sil

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Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BD434S-ND BD434S 011310-BD434S BD434S 598-BD434S BD434S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD434S Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PNP 22V 4A TO-126 Bipolar Transistors - BJT
Polarity PNP PNP; PNP PNP; PNP
Package Type TO-225AA, TO-126-3 TO-126 SOT3; TO-126
Packing Method Bulk; Bulk Bulk; Bulk
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