200W LDMOS power transistor designed for base station applications in the 2110MHz to 2170MHz frequency range, housed in an earless flanged ceramic package (SOT1244C) with six leads. Features include internal matching, integrated ESD protection, high efficiency, and ruggedness to withstand a VSWR of 10:1 under 200W CW conditions. Typical power gain is 19.0 dB, drain efficiency reaches 29%, and adjacent channel power ratio is -30 dBc under 2-carrier W-CDMA modulation. Thermal resistance from junction to case is 0.26 K/W. Compliant with RoHS Directive 2002/95/EC.
Power LDMOS transistor
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BLF8G22LS-200GVJ |
| Package Type | SOT1244C |
