onsemi Single Bipolar Transistors BD679G

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BD679GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD679GOS-ND
Single Bipolar Transistors BD679GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126

Buy Now Datasheet
 - BD679G - Rochester Electronics
Newburyport, MA, United States
Medium Power NPN Darlington Bipolar Power Transistor

Medium Power NPN Darlington Bipolar Power Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - BD679G - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BD679G
Single Bipolar Transistors BD679G
TRANS NPN DARL 80V 4A TO126

TRANS NPN DARL 80V 4A TO126

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD679G - 079608-BD679G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD679G
079608-BD679G
TRANSISTORS - Transistors (BJT) - Single - BD679G 079608-BD679G
Manufacturer: ON Semiconductor Win Source Part Number: 079608-BD679G Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-225AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 30mA, 1.5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 1.5A, 3V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 079608-BD679G
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-225AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.5V @ 30mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD679G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD679G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD679G
TRANS NPN DARL 80V 4A TO126

TRANS NPN DARL 80V 4A TO126

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
BD679G
Darlington Transistors BD679G
Darlington Transistors 4A 80V Bipolar Power NPN

Darlington Transistors 4A 80V Bipolar Power NPN

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Technical Specifications

  DigiKey Rochester Electronics ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Power MOSFET Bipolar RF Transistors Transistors Bipolar RF Transistors Darlington Transistors
Product Number BD679GOS-ND BD679G BD679G 079608-BD679G BD679G BD679G
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD679G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors
Polarity NPN NPN - Darlington; NPN NPN; NPN - Darlington
Package Type TO-225AA, TO-126-3 TO-225 TO-225AA, TO-126-3 SOT3; TO-225AA
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 4000 milliamps 4000 milliamps
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