Ampleon TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLA6H1011-600,112 BLA6H1011-600,112

Description
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BLA6H1011-600,112 - Rochester Electronics
Newburyport, MA, United States
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLA6H1011-600,112 - 770050-BLA6H1011-600,112 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLA6H1011-600,112
770050-BLA6H1011-600,112
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLA6H1011-600,112 770050-BLA6H1011-600,112
Manufacturer: Ampleon USA Inc. Win Source Part Number: 770050-BLA6H1011-600 ,112 Packaging: Bulk Package: SOT539A Current Rating: 72A Frequency: 1.03GHz ~ 1.09GHz Current - Test: 100mA Gain: 17dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 48V Power - Output: 600W Family Name: BLA6H1011-600 Categories: Discrete Semiconductor Products Manufacturer Package: SOT539A Voltage Rating DC: 100V Alternative Parts (Cross-Reference): BLA6H1011-600; Introduction Date: December 07, 2015 ECCN: EAR99 Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Ampleon USA Inc.
Win Source Part Number: 770050-BLA6H1011-600,112
Packaging: Bulk
Package: SOT539A
Current Rating: 72A
Frequency: 1.03GHz ~ 1.09GHz
Current - Test: 100mA
Gain: 17dB
Transistor Type: LDMOS (Dual), Common Source
Voltage - Test: 48V
Power - Output: 600W
Family Name: BLA6H1011-600
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT539A
Voltage Rating DC: 100V
Alternative Parts (Cross-Reference): BLA6H1011-600;
Introduction Date: December 07, 2015
ECCN: EAR99
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BLA6H1011-600,112 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BLA6H1011-600,112
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BLA6H1011-600,112
RF MOSFET LDMOS 48V SOT539A

RF MOSFET LDMOS 48V SOT539A

Supplier's Site
RF FET LDMOS 100V 17DB SOT539A - 38-BLA6H1011-600,112 - Utmel Electronic Limited
Hong Kong, China
RF FET LDMOS 100V 17DB SOT539A
38-BLA6H1011-600,112
RF FET LDMOS 100V 17DB SOT539A 38-BLA6H1011-600,112
RF FET LDMOS 100V 17DB SOT539A

RF FET LDMOS 100V 17DB SOT539A

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Power MOSFET RF MOSFET Transistors RF Transistors RF Transistors
Product Number BLA6H1011-600,112 770050-BLA6H1011-600,112 BLA6H1011-600,112 38-BLA6H1011-600,112
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLA6H1011-600,112 Discrete Semiconductor Products - Transistors - FETs, MOSFETs RF FET LDMOS 100V 17DB SOT539A
Polarity N-Channel N-Channel; N-CHANNEL
Package Type SOT539 SOT3 SOT-539A
Packing Method Tray Bulk; Bulk Tray Tape Reel; Tray
Output Power 600 watts 600 watts
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