Microchip Technology, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
A family of 600V Superjunction MOSFETs available in a variety of current and package options. Additional Features Ultra Low RDS(on) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy...
A family of 650V Superjunction MOSFETs available in a variety of current and package options Additional Features Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy...
A family of 800V Superjunction MOSFETs available in a variety of current and package options. Additional Features Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy...
HT0440 is a dual, high voltage, isolated MOSFET driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs configured as bidirectional or unidirectional switches. It can drive N-channel...
HT0740 is a single channel, high voltage, low input current, isolated driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs, configured as high side switches, up to...
MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output...
MD1211 is a high speed dual MOSFET driver. It is designed to drive high voltage N and P-channel MOSFET transistors for medical ultrasound and other applications requiring a high output...
MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output...
MD1711 is an IC for a two-channel, 5-level, high voltage and high speed transmitter driver. It is designed for medical ultrasound imaging applications, but can also be used for metal...
MD1810 is a high-speed quad MOSFET driver. It is designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound imaging applications. The MD1810 can also be used for...
MD1811 is a high speed, quad MOSFET driver designed to drive high voltage P and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current for...
MD1812 is a high-speed quad MOSFET driver. It is designed to drive two N and two P-channel high voltage DMOS FETs for medical ultrasound applications, but may be used in...
MD1813 is a high-speed quad MOSFET driver. It is designed to drive two N- and two P-channel, high voltage, DMOS FETs for medical ultrasound applications, but may be used in...
MD1820 is a high speed, four channel MOSFET driver designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current...
MD1821 is a high speed, four channel MOSFET driver designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current...
MD1822 is a high speed, four channel MOSFET driver designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current...
MIC4120 and MIC4129 MOSFET drivers are tough, efficient, and easy to use. The MIC4129 is an inverting driver, while the MIC4120 is a non-inverting driver. The MIC4120 and MIC4129 are...
MIC4420, MIC4429 and MIC429 MOSFET drivers are tough, efficient, and easy to use. The MIC4429 and MIC429 are inverting drivers, while the MIC4420 is a non-inverting driver. They are capable...
MIC4421A and MIC4422A MOSFET drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver. Both versions are capable of...
MOSFET drivers that are capable of providing up to 1.5A of peak current while operating from a single 4.5V to 18V supply. There are three output configurations available; dual inverting...
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The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities...
The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are...
The MCP1406/07 devices are a family of buffers/MOSFET drivers that feature a single-output with 6A peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. These...
The MCP14628 is a synchronous MOSFET driver used for driving MOSFETs in a rectified bridge arrangement. This type of arrangement is typical of synchronous buck converter topologies.There are two separate...
The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. The MCP14700 has two PWM inputs to allow independent control of the...
The MCP14A0301/2 devices are high-speed MOSFET drivers that are capable of providing up to 3.0A of peak current while operating from a single 4.5V to 18V supply. The inverting (MCP14A0301)...
The MCP14A0303/4/5 devices are dual output high-speed MOSFET drivers that are capable of providing up to 3.0A of peak current while operating from a single 4.5V to 18V supply. There...
The MCP14A0451/2 devices are high-speed MOSFET drivers that are capable of providing up to 4.5A of peak current while operating from a single 4.5V to 18V supply. There are two...
The MCP14A0451/2 devices are high-speed MOSFET drivers that are capable of providing up to 4.5A of peak current while operating from a single 4.5V to 18V supply. There are two...
The MCP14A0453/4/5 devices are dual output high-speed MOSFET drivers that are capable of providing up to 4.5A of peak current while operating from a single 4.5V to 18V supply. There...
The MCP14A0601/2 devices are high-speed MOSFET drivers that are capable of providing up to 6.0A of peak current while operating from a single 4.5V to 18V supply. There are two...
The MCP14A0901/2 devices are high-speed MOSFET drivers that are capable of providing up to 9.0A of peak current while operating from a single 4.5V to 18V supply. There are two...
The MCP14A1201/2 devices are high-speed MOSFET drivers that are capable of providing up to 12.0A of peak current while operating from a single 4.5V to 18V supply. There are two...
The MCP14E3/E4/E5 devices are a family of 4.0 A, dual output MOSFET drivers with separate enable functions for each output. As MOSFET drivers, the MCP14E3/E4/E5 can charge 2200 pF gate...
The MCP14E3/E4/E5 devices are a family of 4.0A, dual output MOSFET drivers with separate enable functions for each output. As MOSFET drivers, the MCP14E3/E4/E5 can charge 2200 pF gate capacitance...
The MCP14E6/E7/E8 devices are a family of 2A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E6/E7/E8 can charge 1000 pF gate capacitance in...
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in...
The MIC4100/1 are high frequency, 100V Half Bridge MOSFET driver ICs featuring fast 30ns propagation delay times. The low-side and high-side gate drivers are independently controlled and matched to within...
The MIC4102 is a high frequency, 100V Half Bridge MOSFET driver IC featuring internal anti-shoot-through protection. The low-side and high-side gate drivers are controlled by a single input signal to...
The MIC4103 and MIC4104 are high frequency, 100V Half Bridge MOSFET drivers with faster turn-off characteristics than the MIC4100 and MIC4101 drivers. They feature fast 24ns propagation delay times and...
The MIC4123/4124/4125 family are highly reliable BiCMOS/DMOS buffer/driver/MOSFET drivers. They are higher output current versions of the MIC4126/4127/4128, which are improved versions of the MIC4426/4427/4428. All three families are pin-compatible.
The MIC4126, MIC4127, and MIC4128 family are highly-reliable dual 1.5A low-side MOSFET drivers fabricated on BiCMOS/DMOS process. The devices feature low power consumption and high efficiency. The MIC4126/27/28 translate TTL...
The MIC4223/MIC4224/MIC4 225 are a family of a dual 4A, high-speed, low-side MOSFET drivers with logic-level driver enables. The devices are fabricated on Bipolar/CMOS/DMOS (BCD) process and operate from a...
The MIC4414 and MIC4415 are low-side MOSFET drivers designed to switch an N-channel enhancement type MOSFET in low-side switch applications. The MIC4414 is a non-inverting driver and the MIC4415 is...
The MIC4416 and MIC4417 IttyBitty® low-side MOSFET drivers are designed to switch an N-Channel enhancement-type MOSFET from a TTL-compatible control signal in low-side switch applications. The MIC4416 is noninverting and...
The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver/MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428, which are improved versions of the MIC426/427/428. All three families are pin-compatible.
The MIC4426/4427/4428 family are highly-reliable dual low-side MOSFET drivers fabricated on a BiCMOS/DMOS process for low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels...
The TC1410/1410N are 0.5A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V...
The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V...
The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V...
The TC1413/1413N are 3A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V...
The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25mV of ground or...
The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made...
The TC4421A is a high speed, high current, rugged, and effi cient MOSFET driver. The TC4421A is an inverting driver. This device is intended to improve upon the current TC4421...
The TC4422A is a high speed, high current, rugged, and effi cient MOSFET driver. The TC4422A is an non-inverting driver. This device is intended to improve upon the current TC4422...
The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT).The TC4423A/4424A/4425A have matched leading...
The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and...
The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and...
The TC4431/4432 are 30V CMOS buffer/drivers suitable for use in high-side driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept,...
The TC4451/52 are single-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFETs and Insulated Gate Bipolar Transisitors (IGBT). Their high drive current of over 12A is capable...
These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high...

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