Microchip Technology, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Product Name Notes
N/P-Channel Enhancement-Mode Dual MOSFET -- TC1550 TC1550 consists of a high voltage N-channel and P-channel MOSFET in an 8-Lead SOIC package. This is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate...
N/P-Channel Enhancement-Mode Dual MOSFET -- TC2320 TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and...
N/P-Channel Enhancement-Mode Dual MOSFET -- TC6215 TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both MOSFETs have integrated back to back gate-source Zener diode clamps and guaranteed...
N/P-Channel Enhancement-Mode Dual MOSFET -- TC6320 TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are...
N/P-Channel Enhancement-Mode Dual MOSFET -- TC6321 TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer...
N/P Channel Enhancement-Mode MOSFET w/ Drain Diodes -- TC7920 TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high voltage diodes, gate-to-source...
Six Pair, N/P Channel Enhancement-Mode MOSFET -- TC8020 TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps...
N/P Channel Enhancement-Mode MOSFET w/ Drain Diodes -- TC8220 TC8220 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the gate-to-source resistors and gate-to-source Zener diode...
Lateral N-Channel Depletion-Mode MOSFET -- LND01 The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities...
High Speed N-Channel Power MOSFET -- MCP87018
High Speed N-Channel Power MOSFET -- MCP87050
Power MOSFETs -- MCP87022
Power MOSFETs -- MCP87055
Power MOSFETs -- MCP87090
Power MOSFETs -- MCP87130
The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode...
Power MOSFETs -- MCP87030 The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87030 to achieve a low...
P-Channel Enhancement-Mode LATERAL MOSFET -- LP0701 These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high...
60V N-Channel Enhancement-Mode MOSFET -- VN2222L This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input...
500V N-Channel Enhancement-Mode MOSFET -- VN2450
50V N-Channel Enhancement-Mode MOSFET -- VN3205
600V N-Channel Enhancement-Mode MOSFET -- VN2460
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the...
-40V P-Channel Enhancement-Mode MOSFET -- VP0104
-500V P-Channel Enhancement-Mode MOSFET -- VP0550
-60V P-Channel Enhancement-Mode MOSFET -- VP0106
-60V P-Channel Enhancement-Mode MOSFET -- VP2106
-80V P-Channel Enhancement-Mode MOSFET -- VP0808
-90V P-Channel Enhancement-Mode MOSFET -- VP0109
120V N-Channel Enhancement-Mode MOSFET -- VN1206
240V N-Channel Enhancement-Mode MOSFET -- VN2224
240V N-Channel Enhancement-Mode MOSFET -- VN2406
240V N-Channel Enhancement-Mode MOSFET -- VN2410
30V N-Channel Enhancement-Mode MOSFET -- VN0300
400V N-Channel Enhancement-Mode MOSFET -- VN4012
40V N-Channel Enhancement-Mode MOSFET -- VN0104
500V N-Channel Enhancement-Mode MOSFET -- VN0550
60V N-Channel Enhancement-Mode MOSFET -- VN0106
60V N-Channel Enhancement-Mode MOSFET -- VN0606
60V N-Channel Enhancement-Mode MOSFET -- VN10K
60V N-Channel Enhancement-Mode MOSFET -- VN2106
80V N-Channel Enhancement-Mode MOSFET -- VN0808
90V N-Channel Enhancement-Mode MOSFET -- VN0109
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high...
-100V P-Channel Enhancement-Mode MOSFET -- TP2510
-200V P-Channel Enhancement-Mode MOSFET -- TP2520
-20V P-Channel Enhancement-Mode MOSFET -- TP2502
-220V P-Channel Enhancement-Mode MOSFET -- TP2522
-240V P-Channel Enhancement-Mode MOSFET -- TP2424
-350V P-Channel Enhancement-Mode MOSFET -- TP2435
400V N-Channel Enhancement-Mode MOSFET -- TN2640
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and...
-200V P-Channel Enhancement-Mode MOSFET -- TP0620
-30V P-Channel Enhancement-Mode MOSFET -- VP3203
-350V P-Channel Enhancement-Mode MOSFET -- TP2535
-350V P-Channel Enhancement-Mode MOSFET -- TP2635
-400V P-Channel Enhancement-Mode MOSFET -- TP2540
-400V P-Channel Enhancement-Mode MOSFET -- TP2640
-40V P-Channel Enhancement-Mode MOSFET -- TP0604
-40V P-Channel Enhancement-Mode MOSFET -- TP2104
-500V P-Channel Enhancement-Mode MOSFET -- VP2450
-60V P-Channel Enhancement-Mode MOSFET -- TP0610T
100V N-Channel Enhancement-Mode MOSFET -- TN0110
100V N-Channel Enhancement-Mode MOSFET -- TN0610
100V N-Channel Enhancement-Mode MOSFET -- TN2510
100V N-Channel Enhancement-Mode MOSFET -- VN2110
18V N-Channel Enhancement-Mode MOSFET -- TN2501
200V N-Channel Enhancement-Mode MOSFET -- TN0620
20V N-Channel Enhancement-Mode MOSFET -- TN0702
240V N-Channel Enhancement-Mode MOSFET -- TN2124
240V N-Channel Enhancement-Mode MOSFET -- TN2524
250V N-Channel Enhancement-Mode MOSFET -- TN2425
250V N-Channel Enhancement-Mode MOSFET -- TN5325
300V N-Channel Enhancement-Mode MOSFET -- TN2130
350V N-Channel Enhancement-Mode MOSFET -- TN2435
350V N-Channel Enhancement-Mode MOSFET -- TN5335
400V N-Channel Enhancement-Mode MOSFET -- TN2540
40V N-Channel Enhancement-Mode MOSFET -- TN0604
40V N-Channel Enhancement-Mode MOSFET -- TN2504
60V N-Channel Enhancement-Mode MOSFET -- TN0106
60V N-Channel Enhancement-Mode MOSFET -- TN0606
60V N-Channel Enhancement-Mode MOSFET -- TN2106
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and...
-220V P-Channel Enhancement-Mode MOSFET -- TP5322 TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of...
-350V P-Channel Enhancement-Mode MOSFET -- TP5335 TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of...
100V N-Channel Enhancement-Mode MOSFET -- VN2210 VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,...
-100V P-Channel Enhancement-Mode MOSFET -- VP2110 VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,...
-60V P-Channel Enhancement-Mode MOSFET -- VP2206 VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,...