Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2530N8-G DN2530N8-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1033905-DN2530N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 200mA (Tj) Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 150mA, 0V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2530N8-G - 1033905-DN2530N8-G - Win Source Electronics
    Win Source Electronics
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  • Single FETs, MOSFETs - DN2530N8-GDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DN2530N8-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3 - 536-DN2530N8-G - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N Channel, 300V, 0.2A, Sot-89-3; Channel Type Microchip - 67X5068 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 300V, 0.2A, To-243Aa-3; Channel Type Microchip - 85X3185 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1033905-DN2530N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 200mA (Tj) Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 150mA, 0V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2530N8-G - 1033905-DN2530N8-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2530N8-G
1033905-DN2530N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2530N8-G 1033905-DN2530N8-G
Manufacturer: Microchip Technology Win Source Part Number: 1033905-DN2530N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 200mA (Tj) Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 150mA, 0V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1033905-DN2530N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 200mA (Tj)
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 150mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - DN2530N8-GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN2530N8-GTR-ND
Single FETs, MOSFETs DN2530N8-GTR-ND
N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - DN2530N8-GCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN2530N8-GCT-ND
Single FETs, MOSFETs DN2530N8-GCT-ND
N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - DN2530N8-GDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN2530N8-GDKR-ND
Single FETs, MOSFETs DN2530N8-GDKR-ND
N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DN2530N8-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DN2530N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DN2530N8-G
MOSFET N-CH 300V 200MA TO243AA

MOSFET N-CH 300V 200MA TO243AA

Supplier's Site
MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3 - 536-DN2530N8-G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3
536-DN2530N8-G
MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3 536-DN2530N8-G
MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3

MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DN2530N8-G
MOSFET DN2530N8-G
MOSFET 300V 12Ohm

MOSFET 300V 12Ohm

Buy Now Datasheet
Mosfet, N Channel, 300V, 0.2A, Sot-89-3; Channel Type Microchip - 67X5068 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 300V, 0.2A, Sot-89-3; Channel Type Microchip
67X5068
Mosfet, N Channel, 300V, 0.2A, Sot-89-3; Channel Type Microchip 67X5068
MOSFET, N CHANNEL, 300V, 0.2A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 300V, 0.2A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 300V, 0.2A, To-243Aa-3; Channel Type Microchip - 85X3185 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 300V, 0.2A, To-243Aa-3; Channel Type Microchip
85X3185
Mosfet, N Channel, 300V, 0.2A, To-243Aa-3; Channel Type Microchip 85X3185
MOSFET, N CHANNEL, 300V, 0.2A, TO-243AA-3; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 300V, 0.2A, TO-243AA-3; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033905-DN2530N8-G DN2530N8-GTR-ND DN2530N8-G 536-DN2530N8-G DN2530N8-G 67X5068 85X3185
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2530N8-G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MICROCHIP DN2530N8-G. MOSFET, N CH, 300V, 0.2A, TO-243AA-3 MOSFET Mosfet, N Channel, 300V, 0.2A, Sot-89-3; Channel Type Microchip Mosfet, N Channel, 300V, 0.2A, To-243Aa-3; Channel Type Microchip
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 300 volts 300 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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