Microchip Technology, Inc. High Speed QUAD MOSFET Driver MD1810

Description
MD1810 is a high-speed quad MOSFET driver. It is designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound imaging applications. The MD1810 can also be used for ultrasound metal flaw detection, Non-Destructive Testing (NDT), piezoelectric transducer drive, clock drive, and PIN diode drive. The MD1810 has four inputs which individually control four outputs. It also has an output enable (OE) pin. When OE is low, all of the outputs will be in a high impedence state regardless of their logic input control. When OE is high, the MD1810 sets the threshold logic transition to (VOE+VGND)/2. This ensures the transition to always be at half the amplitude of the logic input signal. This allows the device to have inherent propagation delay matching regardless of the logic input amplitude. The output stage of the MD1810 has separate power connections enabling the output signal L and H levels to be chosen independently from the VDD and VSS supply voltages. As an example, the input logic levels may be 0 and 1.8V, the control logic may be powered by +5.0 and -5.0V, and the output L and H levels may be varied anywhere over the range of -5.0 to +5.0V. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present. Additional Features 6.0ns rise and fall time with 1000pF load 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible 5.0 to 12V total supply voltage Smart logic threshold Low jitter design Four matched channels Outputs can swing below ground Output is high impedence when disabled Low inductance package High-performance thermally-enhanced QFN
Description
MD1810 is a high-speed quad MOSFET driver. It is designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound imaging applications. The MD1810 can also be used for ultrasound metal flaw detection, Non-Destructive Testing (NDT), piezoelectric transducer drive, clock drive, and PIN diode drive. The MD1810 has four inputs which individually control four outputs. It also has an output enable (OE) pin. When OE is low, all of the outputs will be in a high impedence state regardless of their logic input control. When OE is high, the MD1810 sets the threshold logic transition to (VOE+VGND)/2. This ensures the transition to always be at half the amplitude of the logic input signal. This allows the device to have inherent propagation delay matching regardless of the logic input amplitude. The output stage of the MD1810 has separate power connections enabling the output signal L and H levels to be chosen independently from the VDD and VSS supply voltages. As an example, the input logic levels may be 0 and 1.8V, the control logic may be powered by +5.0 and -5.0V, and the output L and H levels may be varied anywhere over the range of -5.0 to +5.0V. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present. Additional Features 6.0ns rise and fall time with 1000pF load 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible 5.0 to 12V total supply voltage Smart logic threshold Low jitter design Four matched channels Outputs can swing below ground Output is high impedence when disabled Low inductance package High-performance thermally-enhanced QFN
Datasheet
Datasheet Summary
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The MD1810 is a high-speed quad MOSFET driver designed to drive high-voltage P- and N-channel MOSFETs for medical ultrasound imaging, non-destructive testing, piezoelectric transducer drive, and similar applications. It features four matched channels with 6.0ns rise and fall times under a 1000pF load, and delivers ±2.0A peak output source/sink current. The device supports input logic levels from 1.8V to 5.0V and operates with a total supply voltage range of 5.0V to 12V. Outputs can swing below ground and are high-impedance when disabled. It uses a 16-lead QFN package measuring 4.00mm × 4.00mm with a maximum height of 1.00mm and a 0.65mm pitch. The device includes an output enable pin with smart logic thresholding at (V_OE + V_GND)/2 for propagation delay matching. It operates from -20°C to +85°C, meets RoHS compliance, and has a maximum junction temperature of 125°C. Thermal resistance is 45°C/W on a 1.0oz 4-layer 3×4in PCB.

Datasheet Summary
Powered by GS/AI

The MD1810 is a high-speed quad MOSFET driver designed to drive high-voltage P- and N-channel MOSFETs for medical ultrasound imaging, non-destructive testing, piezoelectric transducer drive, and similar applications. It features four matched channels with 6.0ns rise and fall times under a 1000pF load, and delivers ±2.0A peak output source/sink current. The device supports input logic levels from 1.8V to 5.0V and operates with a total supply voltage range of 5.0V to 12V. Outputs can swing below ground and are high-impedance when disabled. It uses a 16-lead QFN package measuring 4.00mm × 4.00mm with a maximum height of 1.00mm and a 0.65mm pitch. The device includes an output enable pin with smart logic thresholding at (V_OE + V_GND)/2 for propagation delay matching. It operates from -20°C to +85°C, meets RoHS compliance, and has a maximum junction temperature of 125°C. Thermal resistance is 45°C/W on a 1.0oz 4-layer 3×4in PCB.

Suppliers

Company
Product
Description
Supplier Links
High Speed QUAD MOSFET Driver - MD1810 - Microchip Technology, Inc.
Chandler, AZ, United States
High Speed QUAD MOSFET Driver
MD1810
High Speed QUAD MOSFET Driver MD1810
MD1810 is a high-speed quad MOSFET driver. It is designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound imaging applications. The MD1810 can also be used for ultrasound metal flaw detection, Non-Destructive Testing (NDT), piezoelectric transducer drive, clock drive, and PIN diode drive. The MD1810 has four inputs which individually control four outputs. It also has an output enable (OE) pin. When OE is low, all of the outputs will be in a high impedence state regardless of their logic input control. When OE is high, the MD1810 sets the threshold logic transition to (VOE+VGND)/2. This ensures the transition to always be at half the amplitude of the logic input signal. This allows the device to have inherent propagation delay matching regardless of the logic input amplitude. The output stage of the MD1810 has separate power connections enabling the output signal L and H levels to be chosen independently from the VDD and VSS supply voltages. As an example, the input logic levels may be 0 and 1.8V, the control logic may be powered by +5.0 and -5.0V, and the output L and H levels may be varied anywhere over the range of -5.0 to +5.0V. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present. Additional Features 6.0ns rise and fall time with 1000pF load 2.0A peak output source/sink current 1.8 to 5.0V input CMOS compatible 5.0 to 12V total supply voltage Smart logic threshold Low jitter design Four matched channels Outputs can swing below ground Output is high impedence when disabled Low inductance package High-performance thermally-enhanced QFN

MD1810 is a high-speed quad MOSFET driver. It is designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound imaging applications. The MD1810 can also be used for ultrasound metal flaw detection, Non-Destructive Testing (NDT), piezoelectric transducer drive, clock drive, and PIN diode drive. The MD1810 has four inputs which individually control four outputs. It also has an output enable (OE) pin. When OE is low, all of the outputs will be in a high impedence state regardless of their logic input control. When OE is high, the MD1810 sets the threshold logic transition to (VOE+VGND)/2. This ensures the transition to always be at half the amplitude of the logic input signal. This allows the device to have inherent propagation delay matching regardless of the logic input amplitude. The output stage of the MD1810 has separate power connections enabling the output signal L and H levels to be chosen independently from the VDD and VSS supply voltages. As an example, the input logic levels may be 0 and 1.8V, the control logic may be powered by +5.0 and -5.0V, and the output L and H levels may be varied anywhere over the range of -5.0 to +5.0V. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present.

Additional Features

  • 6.0ns rise and fall time with 1000pF load
  • 2.0A peak output source/sink current
  • 1.8 to 5.0V input CMOS compatible
  • 5.0 to 12V total supply voltage
  • Smart logic threshold
  • Low jitter design
  • Four matched channels
  • Outputs can swing below ground
  • Output is high impedence when disabled
  • Low inductance package
  • High-performance thermally-enhanced QFN
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MD1810
Product Name High Speed QUAD MOSFET Driver
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