Microchip Technology, Inc. FETs - Single - LP0701N3-G LP0701N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1202718-LP0701N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 16.5V Id - Continuous Drain Current: 500mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V
  • FETs - Single - LP0701N3-G - 1202718-LP0701N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - LP0701N3-G-ND - DigiKey
    DigiKey
  • Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A - 536-LP0701N3-G - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip - 53Y4189 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LP0701N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1202718-LP0701N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 16.5V Id - Continuous Drain Current: 500mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - LP0701N3-G - 1202718-LP0701N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - LP0701N3-G
1202718-LP0701N3-G
FETs - Single - LP0701N3-G 1202718-LP0701N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1202718-LP0701N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 16.5V Id - Continuous Drain Current: 500mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V

Manufacturer: Microchip Technology
Win Source Part Number: 1202718-LP0701N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 16.5V
Id - Continuous Drain Current: 500mA
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V

Buy Now
Single FETs, MOSFETs - LP0701N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LP0701N3-G-ND
Single FETs, MOSFETs LP0701N3-G-ND
P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92

P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92

Buy Now Datasheet
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A - 536-LP0701N3-G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
536-LP0701N3-G
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A 536-LP0701N3-G
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A

Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A

Supplier's Site
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip - 53Y4189 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip
53Y4189
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip 53Y4189
MOSFET, P-CH, 16.5V, 0.5A, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

MOSFET, P-CH, 16.5V, 0.5A, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LP0701N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LP0701N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LP0701N3-G
MOSFET P-CH 16.5V 500MA TO92

MOSFET P-CH 16.5V 500MA TO92

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
LP0701N3-G
MOSFET LP0701N3-G
MOSFET 16.5V 1.5Ohm

MOSFET 16.5V 1.5Ohm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1202718-LP0701N3-G LP0701N3-G-ND 536-LP0701N3-G 53Y4189 LP0701N3-G LP0701N3-G
Product Name FETs - Single - LP0701N3-G Single FETs, MOSFETs Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 16.5 volts -16.5 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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