Microchip Technology, Inc. FETs - Single - LP0701N3-G LP0701N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1202718-LP0701N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 16.5V Id - Continuous Drain Current: 500mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V
  • FETs - Single - LP0701N3-G - 1202718-LP0701N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - LP0701N3-G-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip - 53Y4189 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LP0701N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A - 536-LP0701N3-G - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1202718-LP0701N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 16.5V Id - Continuous Drain Current: 500mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - LP0701N3-G - 1202718-LP0701N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - LP0701N3-G
1202718-LP0701N3-G
FETs - Single - LP0701N3-G 1202718-LP0701N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1202718-LP0701N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 16.5V Id - Continuous Drain Current: 500mA Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA Gate Source Voltage (Maximum): ±10V Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V

Manufacturer: Microchip Technology
Win Source Part Number: 1202718-LP0701N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 16.5V
Id - Continuous Drain Current: 500mA
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V

Buy Now
Single FETs, MOSFETs - LP0701N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LP0701N3-G-ND
Single FETs, MOSFETs LP0701N3-G-ND
P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92

P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
LP0701N3-G
MOSFET LP0701N3-G
MOSFET 16.5V 1.5Ohm

MOSFET 16.5V 1.5Ohm

Buy Now Datasheet
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip - 53Y4189 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip
53Y4189
Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip 53Y4189
MOSFET, P-CH, 16.5V, 0.5A, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

MOSFET, P-CH, 16.5V, 0.5A, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LP0701N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LP0701N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LP0701N3-G
MOSFET P-CH 16.5V 500MA TO92

MOSFET P-CH 16.5V 500MA TO92

Supplier's Site
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A - 536-LP0701N3-G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
536-LP0701N3-G
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A 536-LP0701N3-G
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A

Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1202718-LP0701N3-G LP0701N3-G-ND LP0701N3-G 53Y4189 LP0701N3-G 536-LP0701N3-G
Product Name FETs - Single - LP0701N3-G Single FETs, MOSFETs MOSFET Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
Polarity P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 16.5 volts -16.5 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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