P-Channel 16.5V 500mA (Tj) 1W (Tc) Through Hole TO-92
Manufacturer: Microchip Technology
Win Source Part Number: 1202718-LP0701N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 16.5V
Id - Continuous Drain Current: 500mA
Rds On (Maximum) at Id, Vgs: 1.5Ohm at 300mA, 5V
Gate Source Voltage(th) (Maximum) at Id: 1V at 1mA
Gate Source Voltage (Maximum): ±10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 15V
MOSFET, P-CH, 16.5V, 0.5A, TO-92; Channel Type:P Channel; Drain Source Voltage Vds:16.5V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
MOSFET P-CH 16.5V 500MA TO92
Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A
| DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | LP0701N3-G-ND | 1202718-LP0701N3-G | 53Y4189 | LP0701N3-G | 536-LP0701N3-G | LP0701N3-G |
| Product Name | Single FETs, MOSFETs | FETs - Single - LP0701N3-G | Mosfet, P-Ch, 16.5V, 0.5A, To-92; Channel Type Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor: P-MOSFET; unipolar; -16.5V; 1W; TO92; -1.25A | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | ||||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; SOT3 | TO-3; TO-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||
| V(BR)DSS | 16.5 volts | -16.5 volts | ||||
| PD | 1000 milliwatts | 1000 milliwatts |
