The LND01 is a lateral N-channel depletion-mode MOSFET designed for normally-on switching applications such as solid-state relays, converters, and analog switches. It is packaged in a 5-lead SOT-23 measuring 2.90 mm by 1.60 mm with a maximum height of 1.45 mm. The device has a drain-to-source and source-to-drain breakdown voltage of 9 V, a saturated drain current of 300 mA, and a static on-state resistance of up to 1.4 Ω. It operates over an ambient temperature range of -25°C to +125°C and has a thermal resistance of 253 °C/W. The part is Pb-free and RoHS-compliant.
The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The body of the transistor is connected to the gate pin. The channel is therefore being pinched off by both the gate and body. The gate pin will have a diode connected to the drain terminal and another diode connected to the source terminal.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | LND01 |
| Product Name | Lateral N-Channel Depletion-Mode MOSFET |
| Polarity | N-Channel |
