Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTM50AM24SCG

Description
Features Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design, M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Motor Control Switched mode power supplies Uninterruptible power supplies
Request a Quote Datasheet
Description
Features Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design, M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Motor Control Switched mode power supplies Uninterruptible power supplies
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTM50AM24SCG
Silicon Carbide/Silicon Hybrid Modules APTM50AM24SCG
Features Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design, M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Motor Control Switched mode power supplies Uninterruptible power supplies

Features

  • Power MOS MOSFETs: Low RDS(on), Low input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance: Symmetrical design, M5 power connectors
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low Profile
  • RoHS compliant

Applications

  • Motor Control
  • Switched mode power supplies
  • Uninterruptible power supplies
Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTM50AM24SCG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTM50AM24SCG
MOSFET 2N-CH 500V 150A SP6

MOSFET 2N-CH 500V 150A SP6

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APTM50AM24SCG APTM50AM24SCG
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
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