Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND150N3-G LND150N3-G

Manufacturer: Microchip Technology
Win Source Part Number: 1055942-LND150N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 740mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 30mA (Tj)
Max Input Capacitance: 10pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1000 Ohm @ 500μA, 0V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

MOSFET Trans, N-Ch, 500V, 30mA, TO-92

MOSFET Trans, N-Ch, 500V, 30mA, TO-92

MOSFET Trans, N-Ch, 500V, 30mA, TO-92

MOSFET N-CH 500V 30MA TO92-3 Product overview: LND150N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 30MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 30MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-LND150N3-G can be used for catalog matching and distributor lookup.