MOSFET N-CH 500V 13MA SOT23-3
MOSFET N-CH 500V 13MA SOT23-3 Product overview: LND150K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 13MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 13MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-LND150K1-G can be used for catalog matching and distributor lookup.
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
Manufacturer: Microchip Technology
Win Source Part Number: 1055941-LND150K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 13mA (Tj)
Max Input Capacitance: 10pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1000 Ohm @ 500μA, 0V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
MOSFET, N CHANNEL, 500V, 0.013A, TO-236AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:13mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 13 mA, 500 V, 850 ohm, 0 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 0.013A, TO-236AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:13mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | LND150K1-G | 278-LND150K1-G | LND150K1-GDKR-ND | 1055941-LND150K1-G | LND150K1-G | 67X5303 | 87X8931 |
| Product Name | Single FETs, MOSFETs | 500V 13MA SOT23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND150K1-G | MOSFET | Mosfet, N Channel, 500V, 0.013A, To-236Ab-3; Channel Type Microchip | Mosfet Transistor, N Channel, 13 Ma, 500 V, 850 Ohm, 0 V Rohs Compliant Microchip |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 500 volts | 500 volts | 500 volts | ||||
| IDSS | 13 milliamps | 13 milliamps | |||||
| PD | 360 milliwatts | 360 milliwatts | 360 milliwatts |
