Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTM120U10SCAVG

Description
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance: Symmetrical design M5, M3 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies Motor control
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM120U10SCAVG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance: Symmetrical design M5, M3 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies Motor control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTM120U10SCAVG
Silicon Carbide/Silicon Hybrid Modules APTM120U10SCAVG
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance: Symmetrical design M5, M3 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Welding converters Switched mode power supplies Uninterruptible power supplies Motor control

Features

  • Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
  • SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Kelvin drain for voltage monitoring
  • Very low stray inductance: Symmetrical design
  • M5, M3 power connectors
  • High level of integration
  • AlN substrate for improved thermal performance

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low Profile
  • RoHS compliant

Applications

  • Welding converters
  • Switched mode power supplies
  • Uninterruptible power supplies
  • Motor control
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM120U10SCAVG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTM120U10SCAVG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTM120U10SCAVG
MOSFET N-CH 1200V 116A SP6

MOSFET N-CH 1200V 116A SP6

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APTM120U10SCAVG APTM120U10SCAVG
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
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