Microchip Technology, Inc. MOSFET LND150N3-G P005

The LND150N3-G is an N-channel depletion-mode DMOS FET in a TO-92 package, designed for high-voltage normally-on switching applications. It has a drain-to-source breakdown voltage of 500 V and a saturated drain current of 1.0 to 3.0 mA at V_GS = 0 V. The device features ESD-protected gate, integral source-drain diode, and low power drive requirements. Thermal resistance is 30 °C/W for both junction-to-case and junction-to-ambient, with a maximum continuous power dissipation of 0.74 W at 25 °C. Operating temperature ranges from -55 °C to +150 °C. The TO-92 package is RoHS compliant.