Microchip Technology, Inc. Dual Input Synchronous MOSFET Driver en544281

Description
The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross condition protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms. The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.0V on a falling PWM input signal. This make the MCP14700 ideal suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low. The HIGHDR and LOWDR source current capability of the MCP14700 device is typically 2A peak. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A typically. The low resistance pull-up and pulldown drive allow the MCP14700 to quickly transition a 3300pF load in typically 10ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity. The MCP14700 is available in a surface mount 8 Lead SOIC package with a body width of 150 mils and the 8 Lead 3mmX3mm DFN package. Additional Features Independent PWM input Control for High-Side and Low-Side Gate Drive inputs are dsPIC compatible High capacitive load drive Capability: 3300 pF in 10.0 ns (typ) Low Supply Current: 80 uA (typ) High Peak Output Current: Source 2.0A (UGATE & LGATE) Sink 2.0A (UGATE) & 4A (LGATE) Internal Bootstrap Blocking Device Supports Floating High-Side Drive Packaging: 8 Lead surface mount SOIC, 150 mil body 8 Lead 3mmX3mm D
Datasheet
Description
The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross condition protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms. The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.0V on a falling PWM input signal. This make the MCP14700 ideal suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low. The HIGHDR and LOWDR source current capability of the MCP14700 device is typically 2A peak. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A typically. The low resistance pull-up and pulldown drive allow the MCP14700 to quickly transition a 3300pF load in typically 10ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity. The MCP14700 is available in a surface mount 8 Lead SOIC package with a body width of 150 mils and the 8 Lead 3mmX3mm DFN package. Additional Features Independent PWM input Control for High-Side and Low-Side Gate Drive inputs are dsPIC compatible High capacitive load drive Capability: 3300 pF in 10.0 ns (typ) Low Supply Current: 80 uA (typ) High Peak Output Current: Source 2.0A (UGATE & LGATE) Sink 2.0A (UGATE) & 4A (LGATE) Internal Bootstrap Blocking Device Supports Floating High-Side Drive Packaging: 8 Lead surface mount SOIC, 150 mil body 8 Lead 3mmX3mm D
Datasheet

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Dual Input Synchronous MOSFET Driver - en544281 - Microchip Technology, Inc.
Chandler, AZ, United States
Dual Input Synchronous MOSFET Driver
en544281
Dual Input Synchronous MOSFET Driver en544281
The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross condition protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms. The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.0V on a falling PWM input signal. This make the MCP14700 ideal suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low. The HIGHDR and LOWDR source current capability of the MCP14700 device is typically 2A peak. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A typically. The low resistance pull-up and pulldown drive allow the MCP14700 to quickly transition a 3300pF load in typically 10ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity. The MCP14700 is available in a surface mount 8 Lead SOIC package with a body width of 150 mils and the 8 Lead 3mmX3mm DFN package. Additional Features Independent PWM input Control for High-Side and Low-Side Gate Drive inputs are dsPIC compatible High capacitive load drive Capability: 3300 pF in 10.0 ns (typ) Low Supply Current: 80 uA (typ) High Peak Output Current: Source 2.0A (UGATE & LGATE) Sink 2.0A (UGATE) & 4A (LGATE) Internal Bootstrap Blocking Device Supports Floating High-Side Drive Packaging: 8 Lead surface mount SOIC, 150 mil body 8 Lead 3mmX3mm D

The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET.
The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross condition protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms.
The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.0V on a falling PWM input signal. This make the MCP14700 ideal suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low.
The HIGHDR and LOWDR source current capability of the MCP14700 device is typically 2A peak. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A typically. The low resistance pull-up and pulldown drive allow the MCP14700 to quickly transition a 3300pF load in typically 10ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity.
The MCP14700 is available in a surface mount 8 Lead SOIC package with a body width of 150 mils and the 8 Lead 3mmX3mm DFN package.

Additional Features

    • Independent PWM input Control for High-Side and Low-Side Gate Drive
    • inputs are dsPIC compatible
    • High capacitive load drive Capability:
      • 3300 pF in 10.0 ns (typ)
    • Low Supply Current: 80 uA (typ)
    • High Peak Output Current:
      • Source 2.0A (UGATE & LGATE)
      • Sink 2.0A (UGATE) & 4A (LGATE)
    • Internal Bootstrap Blocking Device
    • Supports Floating High-Side Drive
    • Packaging:
      • 8 Lead surface mount SOIC, 150 mil body
      • 8 Lead 3mmX3mm D
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number en544281
Product Name Dual Input Synchronous MOSFET Driver
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