Microchip Technology, Inc. Single FETs, MOSFETs LND250K1-G

Description
MOSFET N-CH 500V 13MA SOT23
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Description
MOSFET N-CH 500V 13MA SOT23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - LND250K1-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
LND250K1-G
Single FETs, MOSFETs LND250K1-G
MOSFET N-CH 500V 13MA SOT23

MOSFET N-CH 500V 13MA SOT23

Supplier's Site Datasheet
Single FETs, MOSFETs - LND250K1-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND250K1-GCT-ND
Single FETs, MOSFETs LND250K1-GCT-ND
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

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Single FETs, MOSFETs - LND250K1-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND250K1-GDKR-ND
Single FETs, MOSFETs LND250K1-GDKR-ND
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

Buy Now Datasheet
Single FETs, MOSFETs - LND250K1-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND250K1-GTR-ND
Single FETs, MOSFETs LND250K1-GTR-ND
N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23 (TO-236AB)

Buy Now Datasheet
FETs - Single - LND250K1-G - 1202630-LND250K1-G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - LND250K1-G
1202630-LND250K1-G
FETs - Single - LND250K1-G 1202630-LND250K1-G
Manufacturer: Microchip Technology Win Source Part Number: 1202630-LND250K1-G Packaging: Reel Mounting Style: SMD Technology: MOSFET FET Feature: Depletion Mode Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 0V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 13mA Rds On (Maximum) at Id, Vgs: 1000Ohm at 500μA, 0V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 10pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1202630-LND250K1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 0V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Maximum): 360mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 13mA
Rds On (Maximum) at Id, Vgs: 1000Ohm at 500μA, 0V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 10pF at 25V

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Sheung Wan, Hong Kong
MOSFET 500V 1KOhm

MOSFET 500V 1KOhm

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Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number LND250K1-G LND250K1-GCT-ND 1202630-LND250K1-G LND250K1-G
Product Name Single FETs, MOSFETs Single FETs, MOSFETs FETs - Single - LND250K1-G MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 13 milliamps
PD 360 milliwatts 360 milliwatts
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