Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G LND01K1-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1055940-LND01K1-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -25°C to 125°C (TJ) Case / Package: SOT-23-5 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 9V Continuous Drain Current at 25°C: 330mA (Tj) Max Input Capacitance: 46pF @ 5V Maximum Gate-Source Voltage: +0.6V, -12V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Microchip Technology Win Source Part Number: 1055940-LND01K1-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -25°C to 125°C (TJ) Case / Package: SOT-23-5 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 9V Continuous Drain Current at 25°C: 330mA (Tj) Max Input Capacitance: 46pF @ 5V Maximum Gate-Source Voltage: +0.6V, -12V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G - 1055940-LND01K1-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G
1055940-LND01K1-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G 1055940-LND01K1-G
Manufacturer: Microchip Technology Win Source Part Number: 1055940-LND01K1-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -25°C to 125°C (TJ) Case / Package: SOT-23-5 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 9V Continuous Drain Current at 25°C: 330mA (Tj) Max Input Capacitance: 46pF @ 5V Maximum Gate-Source Voltage: +0.6V, -12V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1055940-LND01K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -25°C to 125°C (TJ)
Case / Package: SOT-23-5
Dimension: SC-74A, SOT-753
Drain-Source Breakdown Voltage: 9V
Continuous Drain Current at 25°C: 330mA (Tj)
Max Input Capacitance: 46pF @ 5V
Maximum Gate-Source Voltage: +0.6V, -12V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 100mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - LND01K1-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND01K1-GCT-ND
Single FETs, MOSFETs LND01K1-GCT-ND
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

Buy Now Datasheet
Single FETs, MOSFETs - LND01K1-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND01K1-GTR-ND
Single FETs, MOSFETs LND01K1-GTR-ND
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

Buy Now Datasheet
Single FETs, MOSFETs - LND01K1-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND01K1-GDKR-ND
Single FETs, MOSFETs LND01K1-GDKR-ND
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LND01K1-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LND01K1-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LND01K1-G
MOSFET N-CH 9V 330MA SOT23-5

MOSFET N-CH 9V 330MA SOT23-5

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Lateral N-Ch MOSFET Depletion-Mode

MOSFET Lateral N-Ch MOSFET Depletion-Mode

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1055940-LND01K1-G LND01K1-GCT-ND LND01K1-G LND01K1-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 9 volts
PD 360 milliwatts
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