Microchip Technology, Inc. Single FETs, MOSFETs LND01K1-G

Description
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5
Request a Quote Datasheet
Description
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - LND01K1-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND01K1-GCT-ND
Single FETs, MOSFETs LND01K1-GCT-ND
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

Buy Now Datasheet
Single FETs, MOSFETs - LND01K1-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND01K1-GDKR-ND
Single FETs, MOSFETs LND01K1-GDKR-ND
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

Buy Now Datasheet
Single FETs, MOSFETs - LND01K1-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
LND01K1-GTR-ND
Single FETs, MOSFETs LND01K1-GTR-ND
N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5

Buy Now Datasheet
Singapore, Singapore
9V 330MA SOT23 MOSFET Transistor
278-LND01K1-G
9V 330MA SOT23 MOSFET Transistor 278-LND01K1-G
MOSFET N-CH 9V 330MA SOT23-5 Product overview: LND01K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 9V, 330MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9V, 330MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-LND01K1-G can be used for catalog matching and distributor lookup.

MOSFET N-CH 9V 330MA SOT23-5 Product overview: LND01K1-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 9V, 330MA, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9V, 330MA, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-LND01K1-G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G - 1055940-LND01K1-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G
1055940-LND01K1-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G 1055940-LND01K1-G
Manufacturer: Microchip Technology Win Source Part Number: 1055940-LND01K1-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 360mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -25°C to 125°C (TJ) Case / Package: SOT-23-5 Dimension: SC-74A, SOT-753 Drain-Source Breakdown Voltage: 9V Continuous Drain Current at 25°C: 330mA (Tj) Max Input Capacitance: 46pF @ 5V Maximum Gate-Source Voltage: +0.6V, -12V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 1055940-LND01K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -25°C to 125°C (TJ)
Case / Package: SOT-23-5
Dimension: SC-74A, SOT-753
Drain-Source Breakdown Voltage: 9V
Continuous Drain Current at 25°C: 330mA (Tj)
Max Input Capacitance: 46pF @ 5V
Maximum Gate-Source Voltage: +0.6V, -12V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 100mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Lateral N-Ch MOSFET Depletion-Mode

MOSFET Lateral N-Ch MOSFET Depletion-Mode

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LND01K1-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LND01K1-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LND01K1-G
MOSFET N-CH 9V 330MA SOT23-5

MOSFET N-CH 9V 330MA SOT23-5

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number LND01K1-GCT-ND 278-LND01K1-G 1055940-LND01K1-G LND01K1-G LND01K1-G
Product Name Single FETs, MOSFETs 9V 330MA SOT23 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - LND01K1-G MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT23; SC-74A, SOT-753 Tape & Reel (TR) SOT3; SOT23; SOT-23-5 SC-74A, SOT-753
MOSFET Operating Mode Depletion Depletion
Transconductance 2.00E-4 kS
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