Microchip Technology, Inc. MOSFET DN3545N3-G P013

The DN3545N3-G is a normally-on N-channel depletion-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 450 V, a static on-state resistance up to 20 Ω, and a saturated drain current of 200 mA. The device operates from -55°C to +150°C, features a positive temperature coefficient, and is RoHS compliant. Its input capacitance is up to 360 pF, and it exhibits low gate and drain-to-source leakage currents. The part is packaged in a TO-92 case with dimensions specified by JEDEC TO-92 standards, and its marking includes "Green" packaging indication.