Microchip Technology, Inc. MOSFET DN2625DK6-G M932

The DN2625DK6-G is a dual N-channel depletion-mode vertical DMOS FET in an 8-lead dual-pad DFN package, designed for applications requiring normally-on switching, such as medical ultrasound beamforming and piezoelectric transducer drivers. It features a drain-to-source breakdown voltage of 250 V, a gate-to-source off voltage of -1.5 V to -2.1 V, and a saturated drain current of 1.1 A. The device has a static drain-to-source on-resistance of up to 3.5 Ω at 25°C and operates from -55°C to 150°C. It meets RoHS standards with a Pb-free matte tin finish and complies with AEC-Q200 for automotive reliability. Thermal resistance is 29°C/W in a 4-layer, 1-oz PCB with 12 vias for the drain pad.