Microchip Technology, Inc. FET, MOSFET Arrays APTM100A13SCG

Description
Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6
  • FET, MOSFET Arrays - APTM100A13SCG-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM100A13SCG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - APTM100A13SCG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
APTM100A13SCG-ND
FET, MOSFET Arrays APTM100A13SCG-ND
Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6

Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6

Buy Now Datasheet
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTM100A13SCG
Silicon Carbide/Silicon Hybrid Modules APTM100A13SCG
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Low Profile RoHS compliant Applications Switched mode power supplies Uninterruptible power supplies Motor control

Features

  • Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very rugged
  • SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance: Symmetrical design
  • M5 power connectors
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Low Profile
  • RoHS compliant

Applications

  • Switched mode power supplies
  • Uninterruptible power supplies
  • Motor control
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM100A13SCG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTM100A13SCG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTM100A13SCG
MOSFET 2N-CH 1000V 65A SP6

MOSFET 2N-CH 1000V 65A SP6

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number APTM100A13SCG-ND APTM100A13SCG APTM100A13SCG
Product Name FET, MOSFET Arrays Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP6 SP6
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