Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3145N8-G DN3145N8-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1033914-DN3145N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 100mA (Tj) Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3145N8-G - 1033914-DN3145N8-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - DN3145N8-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - DN3145N8-GTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DN3145N8-GDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - DN3145N8-GCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DN3145N8-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 450V, 0.1A, To-243Aa-3; Channel Type Microchip - 85X3187 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 450V, 0.1A, Sot-89-3; Channel Type Microchip - 67X5081 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1033914-DN3145N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 100mA (Tj) Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3145N8-G - 1033914-DN3145N8-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3145N8-G
1033914-DN3145N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3145N8-G 1033914-DN3145N8-G
Manufacturer: Microchip Technology Win Source Part Number: 1033914-DN3145N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 100mA (Tj) Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 Ohm @ 100mA, 0V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Microchip Technology
Win Source Part Number: 1033914-DN3145N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current at 25°C: 100mA (Tj)
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 Ohm @ 100mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - DN3145N8-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
DN3145N8-G
Single FETs, MOSFETs DN3145N8-G
MOSFET N-CH 450V 100MA TO243AA

MOSFET N-CH 450V 100MA TO243AA

Supplier's Site
Single FETs, MOSFETs - DN3145N8-GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN3145N8-GTR-ND
Single FETs, MOSFETs DN3145N8-GTR-ND
N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - DN3145N8-GDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN3145N8-GDKR-ND
Single FETs, MOSFETs DN3145N8-GDKR-ND
N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - DN3145N8-GCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN3145N8-GCT-ND
Single FETs, MOSFETs DN3145N8-GCT-ND
N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 450V 100mA (Tj) 1.3W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DN3145N8-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DN3145N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DN3145N8-G
MOSFET N-CH 450V 100MA TO243AA

MOSFET N-CH 450V 100MA TO243AA

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
DN3145N8-G
MOSFET DN3145N8-G
MOSFET 450V 60Ohm

MOSFET 450V 60Ohm

Buy Now Datasheet
Mosfet, N Channel, 450V, 0.1A, To-243Aa-3; Channel Type Microchip - 85X3187 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 450V, 0.1A, To-243Aa-3; Channel Type Microchip
85X3187
Mosfet, N Channel, 450V, 0.1A, To-243Aa-3; Channel Type Microchip 85X3187
MOSFET, N CHANNEL, 450V, 0.1A, TO-243AA-3; Channel Type:N Channel; Drain Source Voltage Vds:450V; Continuous Drain Current Id:100mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 450V, 0.1A, TO-243AA-3; Channel Type:N Channel; Drain Source Voltage Vds:450V; Continuous Drain Current Id:100mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 450V, 0.1A, Sot-89-3; Channel Type Microchip - 67X5081 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 450V, 0.1A, Sot-89-3; Channel Type Microchip
67X5081
Mosfet, N Channel, 450V, 0.1A, Sot-89-3; Channel Type Microchip 67X5081
MOSFET, N CHANNEL, 450V, 0.1A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:450V; Continuous Drain Current Id:100mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 450V, 0.1A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:450V; Continuous Drain Current Id:100mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033914-DN3145N8-G DN3145N8-G DN3145N8-GTR-ND DN3145N8-G DN3145N8-G 85X3187 67X5081
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3145N8-G Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 450V, 0.1A, To-243Aa-3; Channel Type Microchip Mosfet, N Channel, 450V, 0.1A, Sot-89-3; Channel Type Microchip
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 450 volts 450 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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