MOSFET N-CH 350V 500MA TO220-3
N-Channel 350V 500mA (Tj) 15W (Tc) Through Hole TO-220-3
Manufacturer: Microchip Technology
Win Source Part Number: 772800-DN2535N5-G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Family Name: DN2535N5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Manufacturer Package: TO-220-3
Channel Type Type: N
Drain Source Voltage: 350V
Input Capacitance (Ciss) (Maximum) @ Vds: 300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 15W (Tc)
Rds On (Maximum) @ Id, Vgs: 25 Ohm @ 120mA, 0V
Introduction Date: December 10, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFET, N CHANNEL, 350V, 0.5A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:-; MSL:- RoHS Compliant: Yes
MOSFET N-CH 350V 500MA TO220-3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DN2535N5-G | DN2535N5-G-ND | 772800-DN2535N5-G | 67X5072 | DN2535N5-G | DN2535N5-G |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2535N5-G | Mosfet, N Channel, 350V, 0.5A, To-220-3; Channel Type Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 350 volts | |||||
| IDSS | 500 milliamps | 500 milliamps | ||||
| PD | 15000 milliwatts | 15000 milliwatts |
