Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2540N3-G DN2540N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1033908-DN2540N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Family Name: DN2540N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 (TO-226) Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 120mA (Tj) Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 Ohm @ 120mA, 0V Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Communications & Networking
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Description
Manufacturer: Microchip Technology Win Source Part Number: 1033908-DN2540N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Family Name: DN2540N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 (TO-226) Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 120mA (Tj) Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 Ohm @ 120mA, 0V Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Communications & Networking
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2540N3-G - 1033908-DN2540N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2540N3-G
1033908-DN2540N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2540N3-G 1033908-DN2540N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1033908-DN2540N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Family Name: DN2540N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 (TO-226) Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 120mA (Tj) Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 Ohm @ 120mA, 0V Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Communications & Networking

Manufacturer: Microchip Technology
Win Source Part Number: 1033908-DN2540N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Family Name: DN2540N3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92 (TO-226)
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 120mA (Tj)
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 Ohm @ 120mA, 0V
Introduction Date: December 10, 1998
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking

Buy Now Datasheet
MOSFETs - 8293235 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8293235
MOSFETs 8293235
MOSFET Trans, N-Ch, 400V, 120mA, TO-92

MOSFET Trans, N-Ch, 400V, 120mA, TO-92

Supplier's Site
MOSFETs - 8293235P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8293235P
MOSFETs 8293235P
MOSFET Trans, N-Ch, 400V, 120mA, TO-92

MOSFET Trans, N-Ch, 400V, 120mA, TO-92

Supplier's Site
MOSFETs - 1704341 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1704341
MOSFETs 1704341
MOSFET Trans, N-Ch, 400V, 120mA, TO-92

MOSFET Trans, N-Ch, 400V, 120mA, TO-92

Supplier's Site
Single FETs, MOSFETs - DN2540N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN2540N3-G-ND
Single FETs, MOSFETs DN2540N3-G-ND
N-Channel 400V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)

N-Channel 400V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DN2540N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DN2540N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DN2540N3-G
MOSFET N-CH 400V 120MA TO92

MOSFET N-CH 400V 120MA TO92

Supplier's Site
Mosfet, N Channel, 400V, 0.12A, To-92-3; Transistor Polarity Microchip - 67X5073 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 400V, 0.12A, To-92-3; Transistor Polarity Microchip
67X5073
Mosfet, N Channel, 400V, 0.12A, To-92-3; Transistor Polarity Microchip 67X5073
MOSFET, N CHANNEL, 400V, 0.12A, TO-92-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:120mA; On Resistance Rds(on):17ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:0V RoHS Compliant: Yes

MOSFET, N CHANNEL, 400V, 0.12A, TO-92-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:120mA; On Resistance Rds(on):17ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:0V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 120 Ma, 400 V, 17 Ohm, 0 V Rohs Compliant Microchip - 87X8685 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 120 Ma, 400 V, 17 Ohm, 0 V Rohs Compliant Microchip
87X8685
Mosfet Transistor, N Channel, 120 Ma, 400 V, 17 Ohm, 0 V Rohs Compliant Microchip 87X8685
MOSFET Transistor, N Channel, 120 mA, 400 V, 17 ohm, 0 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 120 mA, 400 V, 17 ohm, 0 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 400V 25Ohm

MOSFET 400V 25Ohm

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Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1033908-DN2540N3-G 8293235 8293235P DN2540N3-G-ND DN2540N3-G 67X5073 87X8685 DN2540N3-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2540N3-G MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 400V, 0.12A, To-92-3; Transistor Polarity Microchip Mosfet Transistor, N Channel, 120 Ma, 400 V, 17 Ohm, 0 V Rohs Compliant Microchip MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Depletion Depletion
V(BR)DSS 400 volts
PD 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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