Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTM120DA30CT1G

Description
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications AC and DC motor control Switched mode power supplies Power Factor Correction
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM120DA30CT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications AC and DC motor control Switched mode power supplies Power Factor Correction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTM120DA30CT1G
Silicon Carbide/Silicon Hybrid Modules APTM120DA30CT1G
Features Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications AC and DC motor control Switched mode power supplies Power Factor Correction

Features

  • Power MOS 8 MOSFET: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated, Very Rugged
  • SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • High level of integration

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • AC and DC motor control
  • Switched mode power supplies
  • Power Factor Correction
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM120DA30CT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTM120DA30CT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTM120DA30CT1G
MOSFET N-CH 1200V 31A SP1

MOSFET N-CH 1200V 31A SP1

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APTM120DA30CT1G APTM120DA30CT1G
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
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