Manufacturer: Microchip Technology
Win Source Part Number: 1033909-DN2540N5-G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 500mA (Tj)
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 Ohm @ 120mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
N-Channel 400V 500mA (Tj) 15W (Tc) Through Hole TO-220-3
MOSFET Trans, N-Ch, 400V, 500mA, TO-220
MOSFET Trans, N-Ch, 400V, 500mA, TO-220
MOSFET Trans, N-Ch, 400V, 500mA, TO-220
MOSFET, N CHANNEL, 400V, 0.5A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:-; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 500 mA, 400 V, 17 ohm, 0 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033909-DN2540N5-G | DN2540N5-G-ND | 8293244P | 8293244 | 67X5075 | 87X8686 | DN2540N5-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN2540N5-G | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, N Channel, 400V, 0.5A, To-220-3; Channel Type Microchip | Mosfet Transistor, N Channel, 500 Ma, 400 V, 17 Ohm, 0 V Rohs Compliant Microchip | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Depletion | Depletion | |||||
| V(BR)DSS | 400 volts | ||||||
| PD | 15000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) |